根据商用SRAM的辐射硬度进行GEANT4模拟

2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2015-04-19 DOI:10.1109/EUROSIME.2015.7103106

A. Moujbani, K. Weide-Zaage, Berthold Romer, F. Sabath

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引用次数: 0

摘要

对商用货架(COTS) sram的辐射硬度进行了测量和仿真研究。模拟使用了GEANT4工具。使用GEANT4可以确定由施加的能量以及辐射源产生的不同粒子。研究发现，单事件扰动与辐射能量、技术节点和反应有关。此外，还发现了产生的粒子与SEU之间可能存在的相关性。

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GEANT4 simulations in terms of radiation hardness of commercially available SRAM

Commercial of the shelf (COTS) SRAMS were investigated by measurements and simulation in terms of radiation hardness. For the simulations the GEANT4 tool was used. With GEANT4 it is possible to determine the different particles generated by the applied energy as well as the radiation source. It was found that the single event upsets (SEU) is related to the radiation energy, technology node and react differently for the investigated SRAM. Furthermore a possible correlation between the generated particles and the SEU was found.

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2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems

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