利用热预算方法对PCM进行RESET建模

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2010-12-01 DOI:10.1109/EDSSC.2010.5713782

K. C. Kwong, Jin He, P. Mok, M. Chan

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引用次数: 1

摘要

本文研究了相变存储器复位编程过程中晶态到非晶态的相变过程。建立了一种热预算方法来描述复位编程后电池结构、输入电流脉冲幅值和淬火时间对最终电阻的影响。该模型已在电路模拟器上实现，并通过文献报道的实验数据进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RESET modeling of PCM using thermal budget approach

In this work, the phase transition from crystalline state to amorphous state during RESET programming of a phase change memory is studied. A thermal budget approach is developed to describe the effect of cell structure, input current pulse amplitude and the quenching time on the final resistance after RESET programming. The model has been implemented to a circuit simulator and verified by experimental data reported in the literature.

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来源期刊

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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