硅led在FinFET技术

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948813

G. Piccolo, P. Kuindersma, L. Ragnarsson, R. Hueting, N. Collaert, J. Schmitz

{"title":"硅led在FinFET技术","authors":"G. Piccolo, P. Kuindersma, L. Ragnarsson, R. Hueting, N. Collaert, J. Schmitz","doi":"10.1109/ESSDERC.2014.6948813","DOIUrl":null,"url":null,"abstract":"We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Silicon LEDs in FinFET technology\",\"authors\":\"G. Piccolo, P. Kuindersma, L. Ragnarsson, R. Hueting, N. Collaert, J. Schmitz\",\"doi\":\"10.1109/ESSDERC.2014.6948813\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948813\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948813","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

我们介绍了我们所知的是鳍状场效应管技术中第一个向前工作的硅发光二极管(LED)。结果表明，在1100nm左右的近红外发射是由低掺杂有源发光区均匀分布的硅的带对带发光引起的。我们还建议进一步改进，以充分利用这种结构的潜力。

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Silicon LEDs in FinFET technology

We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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