一个1.5 V CMOS平方根域滤波器

ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483) Pub Date : 2001-09-02 DOI:10.1109/ICECS.2001.957491

A. López-Martín, A. Carlosena

{"title":"一个1.5 V CMOS平方根域滤波器","authors":"A. López-Martín, A. Carlosena","doi":"10.1109/ICECS.2001.957491","DOIUrl":null,"url":null,"abstract":"A first-order CMOS integrated filter based on MOS translinear techniques is presented. The internal voltage swing compression due to its companding nature, together with the biasing scheme employed for the MOS translinear loops required, allows to operate it at supply voltages as low as one V/sub GS/ plus two V/sub DS/ of a saturated MOSFET. Measurement results demonstrate on silicon the proposed techniques, which can be readily extended to higher-order filters.","PeriodicalId":141392,"journal":{"name":"ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 1.5 V CMOS square-root domain filter\",\"authors\":\"A. López-Martín, A. Carlosena\",\"doi\":\"10.1109/ICECS.2001.957491\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A first-order CMOS integrated filter based on MOS translinear techniques is presented. The internal voltage swing compression due to its companding nature, together with the biasing scheme employed for the MOS translinear loops required, allows to operate it at supply voltages as low as one V/sub GS/ plus two V/sub DS/ of a saturated MOSFET. Measurement results demonstrate on silicon the proposed techniques, which can be readily extended to higher-order filters.\",\"PeriodicalId\":141392,\"journal\":{\"name\":\"ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2001.957491\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2001.957491","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

提出了一种基于MOS跨线性技术的一阶CMOS集成滤波器。由于其扩展特性，内部电压摆幅压缩，加上所需MOS跨线性回路所采用的偏置方案，允许在低至饱和MOSFET的1 V/sub GS/加2 V/sub DS/的电源电压下工作。在硅上的测量结果表明，所提出的技术可以很容易地扩展到高阶滤波器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 1.5 V CMOS square-root domain filter

A first-order CMOS integrated filter based on MOS translinear techniques is presented. The internal voltage swing compression due to its companding nature, together with the biasing scheme employed for the MOS translinear loops required, allows to operate it at supply voltages as low as one V/sub GS/ plus two V/sub DS/ of a saturated MOSFET. Measurement results demonstrate on silicon the proposed techniques, which can be readily extended to higher-order filters.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483)

自引率

0.00%

发文量