{"title":"自旋无机材料研究进展","authors":"K. Sakai, K. Takanashi, Tatsuya Sakai","doi":"10.1109/ISSM51728.2020.9377503","DOIUrl":null,"url":null,"abstract":"Spin-on glass (SOG), poly-carbosilane (PCS) and metal hardmask (MHM) materials with unique film properties were developed and introduced in this paper. PCS materials showed good gap-fill performance, thermal stability and dielectric constant than standard SOG materials. PCS material form good film quality up to 10 μm film thickness by single coat process. We have also investigated the combination of PCS material and UV irradiation process. UV irradiation alters PCS film property and improved solubility to diluted aqueous HF. MHM materials showed good gap-fill performance, slower dry etching rate and unique optical constant compared to low temperature oxide (LTO). JSR spin-on PCS and MHM materials show different film properties and improved performance compared to chemical vapor deposition (CVD) or physical vapor deposition (PVD) films are expected to simplify the complex/fine semiconductor device manufacturing process.","PeriodicalId":270309,"journal":{"name":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Recent Progress on Spin-on Inorganic Materials\",\"authors\":\"K. Sakai, K. Takanashi, Tatsuya Sakai\",\"doi\":\"10.1109/ISSM51728.2020.9377503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Spin-on glass (SOG), poly-carbosilane (PCS) and metal hardmask (MHM) materials with unique film properties were developed and introduced in this paper. PCS materials showed good gap-fill performance, thermal stability and dielectric constant than standard SOG materials. PCS material form good film quality up to 10 μm film thickness by single coat process. We have also investigated the combination of PCS material and UV irradiation process. UV irradiation alters PCS film property and improved solubility to diluted aqueous HF. MHM materials showed good gap-fill performance, slower dry etching rate and unique optical constant compared to low temperature oxide (LTO). JSR spin-on PCS and MHM materials show different film properties and improved performance compared to chemical vapor deposition (CVD) or physical vapor deposition (PVD) films are expected to simplify the complex/fine semiconductor device manufacturing process.\",\"PeriodicalId\":270309,\"journal\":{\"name\":\"2020 International Symposium on Semiconductor Manufacturing (ISSM)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Symposium on Semiconductor Manufacturing (ISSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM51728.2020.9377503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM51728.2020.9377503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Spin-on glass (SOG), poly-carbosilane (PCS) and metal hardmask (MHM) materials with unique film properties were developed and introduced in this paper. PCS materials showed good gap-fill performance, thermal stability and dielectric constant than standard SOG materials. PCS material form good film quality up to 10 μm film thickness by single coat process. We have also investigated the combination of PCS material and UV irradiation process. UV irradiation alters PCS film property and improved solubility to diluted aqueous HF. MHM materials showed good gap-fill performance, slower dry etching rate and unique optical constant compared to low temperature oxide (LTO). JSR spin-on PCS and MHM materials show different film properties and improved performance compared to chemical vapor deposition (CVD) or physical vapor deposition (PVD) films are expected to simplify the complex/fine semiconductor device manufacturing process.