Hongyu Li, H. Ji, G. Chen, Alfred Neo Siang Kiat, Teo Wei Jie Dickson, K. Chui
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Process Development and Integration for Wafer-to-Wafer Hybrid Bonding
Three wet clean processes within conventional BEOL line were evaluated for the hybrid bonding. Global oxide uniformity requirement was found out within hybrid bonding process development. Effects of annealing temperature on the Cu bonding pad and oxide surface were studied. Electrical connection through TSV and hybrid bonding pads was demonstrated.