{"title":"具有49fJK2分辨率的CMOS温度传感器","authors":"S. Pan, Hui Jiang, K. Makinwa","doi":"10.23919/VLSIC.2017.8008557","DOIUrl":null,"url":null,"abstract":"This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution (160μΚ in 10ms) and a low supply-voltage sensitivity (< 20mK/V at room temperature).","PeriodicalId":176340,"journal":{"name":"2017 Symposium on VLSI Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"A CMOS temperature sensor with a 49fJK2 resolution FoM\",\"authors\":\"S. Pan, Hui Jiang, K. Makinwa\",\"doi\":\"10.23919/VLSIC.2017.8008557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution (160μΚ in 10ms) and a low supply-voltage sensitivity (< 20mK/V at room temperature).\",\"PeriodicalId\":176340,\"journal\":{\"name\":\"2017 Symposium on VLSI Circuits\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIC.2017.8008557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2017.8008557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CMOS temperature sensor with a 49fJK2 resolution FoM
This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution (160μΚ in 10ms) and a low supply-voltage sensitivity (< 20mK/V at room temperature).