嵌入In4Se3层状半导体晶体的自组装二维银纳米结构研究

2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP) Pub Date : 2018-09-01 DOI:10.1109/NAP.2018.8915253

P. Galiy, T. Nenchuk, O. Dveriy, A. Ciszewski, P. Mazur, I.O. Poplavskyy

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引用次数: 0

摘要

表面晶格的沟槽结构与非有意嵌入的In4Se3晶体的体晶体学数据一致，也发现In4Se3银嵌入晶体的沟槽结构与(100)表面的扫描隧道显微镜(STM)图像相同。银嵌层后，In4Se3(Ag)晶体表面无重构现象。插层晶体的表面也显示出“暗斑和亮斑”，这与扫描隧道光谱(STS)数据显示的插层存在与否有关。解理上这些不同的局部区域表现出半导体和金属的性质。STS光谱允许我们确定一个额外的金属成分的出现-银，除了铟在晶体的层间间隙在局部水平。俄歇能谱在宏观尺度上记录了嵌层银的存在。STM/STS数据表明，在纳米尺度上，银在解理表面的嵌层分布不均匀。

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Study of Self-assembled 2D Ag Nanostructures Intercalated into In4Se3 Layered Semiconductor Crystal

The furrowed structure of the surface lattice in accord with bulk crystallography data for non intentionally intercalated In4Se3 crystal is also find to be the same for In4Se3 silver intercalated crystal as it could be derived from scanning tunneling microscopy (STM) images of (100) surfaces. In4Se3(Ag) crystal surface doesn't show reconstruction after silver intercalation. Intercalated crystal's surfaces also reveal “dark and bright patches”, associated with the presence or lack of intercalate due to scanning tunneling spectroscopy (STS) data. These different local areas on the cleavages show semiconductor and metallic nature. STS spectra allow us to determine the occurrence of an additional metallic component - silver, except, indium in the interlayer gap of the crystal on the local level. Auger electron spectroscopy records the presence of silver intercalate on macro scale. STM/STS data show on non-uniform intercalated silver distribution on the cleavage surface in nanoscale.

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2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP)

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