几何和工艺对MEMS尺寸损耗的影响:基于频率的表征

G. Gattere, F. Rizzini, L. Corso, A. Alessandri, F. Tripodi, S. Paleari
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引用次数: 2

摘要

在本文中,我们描述了一种方法来全面表征深反应离子蚀刻(DRIE)的微电子机械(MEM)结构。该制造步骤的一个关键方面是相对于标称几何形状的尺寸损耗(CDloss)。为简单起见,通常认为该参数在机械元件设计中是均匀的,从而导致一系列近似。为了更好地塑造蚀刻过程对机械元件的局部响应,实现了谐振结构的测试模式。设计了一种平面内谐振器,该谐振器采用折叠弹簧布置成“唐”形,并由不同的虚拟元件屏蔽。通过广泛的实验活动,可以证明谐振器的第一固有频率(即CDloss)与屏蔽元件的特征尺寸之间存在很强的相关性。此外,分析了不同蚀刻设备的影响,显示了显著的影响,并强调了每种工艺工具的不同掩模设计定制的必要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Geometrical and Process Effects on MEMS Dimensional Loss: a Frequency Based Characterization
In this paper we describe a methodology to fully characterize the Deep Reactive Ion Etching (DRIE) of Micro-Electro Mechanical (MEM) structures. One of the key aspects of this manufacturing step is the dimensional loss (CDloss) with respect to nominal geometry. For the sake of simplicity, this parameter is commonly considered uniform in the mechanical element design, leading to a series of approximations. In order to better fashion the local response of the etching process on the mechanical elements, a test pattern of resonating structures was implemented. An in plane resonator using folded springs arranged in a “Tang-like” configuration, shielded with different sets of dummy elements was designed. With an extensive experimental campaign, it has been possible to demonstrate a strong correlation between the first natural frequency of the resonator (i.e. CDloss) with the characteristic dimensions of the shielding elements. Moreover, the effect of different etching equipment was analyzed, showing a significant impact and highlighting the need of different mask design customization for each process tool.
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