f类和反f类放大器的门电压削波行为分析

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8551045

Hiroshi Yamamoto, K. Kikuchi, N. Ui, Kazutaka Inoue, V. Vadalà, G. Bosi, A. Raffo, G. Vannini

{"title":"f类和反f类放大器的门电压削波行为分析","authors":"Hiroshi Yamamoto, K. Kikuchi, N. Ui, Kazutaka Inoue, V. Vadalà, G. Bosi, A. Raffo, G. Vannini","doi":"10.1109/BCICTS.2018.8551045","DOIUrl":null,"url":null,"abstract":"This paper describes the influence of gate-voltage clipping behavior on drain efficiency in case of class-F and inverse class-F $(\\mathbf{F}^{-1})$ operations under saturated regime. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for $\\mathbf{class}-\\mathbf{F}^{-1}$ operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT support our analytical results.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers\",\"authors\":\"Hiroshi Yamamoto, K. Kikuchi, N. Ui, Kazutaka Inoue, V. Vadalà, G. Bosi, A. Raffo, G. Vannini\",\"doi\":\"10.1109/BCICTS.2018.8551045\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the influence of gate-voltage clipping behavior on drain efficiency in case of class-F and inverse class-F $(\\\\mathbf{F}^{-1})$ operations under saturated regime. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for $\\\\mathbf{class}-\\\\mathbf{F}^{-1}$ operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT support our analytical results.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8551045\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文描述了饱和状态下F类和反F类$(\mathbf{F}^{-1})$运算时栅极削波行为对漏极效率的影响。采用简化的晶体管模型进行了数值分析。因此，我们已经证明$\mathbf{class}-\mathbf{F}^{-1}$运算的限制因素是栅极二极管导通而不是膝电压。另一方面，f类PA受到膝关节电压效应的限制。此外，在GaN HEMT上进行的非线性测量支持了我们的分析结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers

This paper describes the influence of gate-voltage clipping behavior on drain efficiency in case of class-F and inverse class-F $(\mathbf{F}^{-1})$ operations under saturated regime. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for $\mathbf{class}-\mathbf{F}^{-1}$ operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT support our analytical results.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

自引率

0.00%

发文量