{"title":"Al/p-Si(100)和Ti/p-Si(100)肖特基势垒二极管电特性的温度依赖性","authors":"Arely Vazquez, J. Molina","doi":"10.1109/ICEV56253.2022.9959625","DOIUrl":null,"url":null,"abstract":"Current-voltage (I–V) and capacitance-voltage (C-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) were carried out in a temperature range of 25–85°C. The zero-bias Schottky barrier height (SBH) and ideality factor n were calculated for both metal-semiconductor (MS) structures by using thermionic emission theory showed a strong dependence on temperature. The metals employed (aluminum and titanium) in the fabrication process were characterized to obtain electrical and physical parameters.","PeriodicalId":178334,"journal":{"name":"2022 IEEE International Conference on Engineering Veracruz (ICEV)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature dependence of electrical characteristics of Al/p-Si(100) and Ti/p-Si(100) Schottky barrier diodes\",\"authors\":\"Arely Vazquez, J. Molina\",\"doi\":\"10.1109/ICEV56253.2022.9959625\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Current-voltage (I–V) and capacitance-voltage (C-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) were carried out in a temperature range of 25–85°C. The zero-bias Schottky barrier height (SBH) and ideality factor n were calculated for both metal-semiconductor (MS) structures by using thermionic emission theory showed a strong dependence on temperature. The metals employed (aluminum and titanium) in the fabrication process were characterized to obtain electrical and physical parameters.\",\"PeriodicalId\":178334,\"journal\":{\"name\":\"2022 IEEE International Conference on Engineering Veracruz (ICEV)\",\"volume\":\"2015 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Engineering Veracruz (ICEV)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEV56253.2022.9959625\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Engineering Veracruz (ICEV)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEV56253.2022.9959625","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature dependence of electrical characteristics of Al/p-Si(100) and Ti/p-Si(100) Schottky barrier diodes
Current-voltage (I–V) and capacitance-voltage (C-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) were carried out in a temperature range of 25–85°C. The zero-bias Schottky barrier height (SBH) and ideality factor n were calculated for both metal-semiconductor (MS) structures by using thermionic emission theory showed a strong dependence on temperature. The metals employed (aluminum and titanium) in the fabrication process were characterized to obtain electrical and physical parameters.
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