Quantum Numerical Simulation of a HEMT Performance

This work simulated the structure of HEMT (transistors of high electronic movements) with and without the field plate. We analyze all characteristics in the development of simulation systems. According to the result of the devices, all high performance levels have been extracted. These devices can improve the ability to bear the burden of the current density passes in the channel. The simulation results with Tcad-Silvaco software exhibit current density, as high as 2.05 A/m, a peak extrinsic transconductance of $590 \mathrm {m}\underline {\mathrm {S}/\mathrm {m}}$ at VDS $=2.0 \underline {\mathrm {V}}$ in DC characteristics. In the cutting frequency cutoffs, the value has reached to 638 GHz in the first device and 463 GHz for second device with field plate, the maximum frequency was close in limits of 1.7 THz in the two devices, the maximum efficiency of 73% in second device. The design of the device has been improved by using the deriving genetic algorithms and Monte Carlo method.