基于ccd的脉冲MeV光子束诊断

Yigong Zhang, B. Quiter, P. Barton, B. Plimley, K. Vetter, C. Geddes
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引用次数: 2

摘要

窄带宽,mev水平的光子光束可以产生的汤姆逊散射激光从快电子。来自激光等离子体加速GeV电子的强光子源(> 1 MeV, 108光子/次)为紧凑型主动询问装置提供了可能性。然而,由于毫米尺度的聚焦和fs尺度的脉冲持续时间,这种强光子光束的表征本身就具有挑战性。一个解决方案,以表征空间和能量分布的每次射击是采用低质量的散射材料,并跟踪散射康普顿电子的方向和能量。继加州大学伯克利分校在全耗尽硅ccd上的电子轨迹康普顿成像工作之后,我们提出了一种测量MeV光子束位置和能量的测量方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CCD-based diagnostics for pulsed MeV photon beams
Narrow bandwidth, MeV-level photon beams can be generated by Thomson scattering of laser light from fast electrons. Intense photon sources (> 1 MeV, 108 photons/shot) from laser plasma accelerated GeV electrons present the possibility for compact active interrogation devices. However, the characterization of such intense photon beams is inherently challenging due to mm-scale focusing and fs-scale pulse duration. A solution to the characterization of both spatial and energy distributions of each shot is to employ a low mass scattering material and track the scattered Compton electron's direction and energy. Following previous work at UC Berkeley with electron track Compton imaging in fully-depleted silicon CCDs, we present a measurement scheme for the shot-by-shot measurement of MeV photon beam position and energy.
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