M.N. Jaafar Ali, B. Bhuva, S. Kerns, M. Maher, R. Lawrence, A. Hoffmann
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Characterizing effects of radiation on forward and reverse saturation characteristics of n-channel devices [SRAMs]
The forward and reverse characteristics of an n-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity increases with the total dose. The unmatched forward and reverse characteristics will be a major problem for memory circuits for advanced technologies.