J. Nakata, T. Sogo, K. Yamanaka, T. Kameda, Y. Mihashi
{"title":"Thermosenstor & # 8212;一种新型温度敏感开关装置","authors":"J. Nakata, T. Sogo, K. Yamanaka, T. Kameda, Y. Mihashi","doi":"10.1109/IEDM.1976.189037","DOIUrl":null,"url":null,"abstract":"A new type of temperature-sensitive switching device constructed with a p-n-p -n structure has been developed. This new device can be turned on by a predetermined temperature under the forward bias. This turn-on temperature can be shifted from 50°C to 150°C by connecting gate shunt resistance in parallel with emitter junction of the device. This device owes its features to the thyristor structure which gives contactless and latching switch, gate controlled operation and fast switching. However, several modifications have been made from conventional thyristor design in doping levels and dimensions for temperature-sensitive switching device. The structure, operation, characteristics the feature of the device are described.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Thermosenstor — A new temperature-sensitive switching device\",\"authors\":\"J. Nakata, T. Sogo, K. Yamanaka, T. Kameda, Y. Mihashi\",\"doi\":\"10.1109/IEDM.1976.189037\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new type of temperature-sensitive switching device constructed with a p-n-p -n structure has been developed. This new device can be turned on by a predetermined temperature under the forward bias. This turn-on temperature can be shifted from 50°C to 150°C by connecting gate shunt resistance in parallel with emitter junction of the device. This device owes its features to the thyristor structure which gives contactless and latching switch, gate controlled operation and fast switching. However, several modifications have been made from conventional thyristor design in doping levels and dimensions for temperature-sensitive switching device. The structure, operation, characteristics the feature of the device are described.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189037\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermosenstor — A new temperature-sensitive switching device
A new type of temperature-sensitive switching device constructed with a p-n-p -n structure has been developed. This new device can be turned on by a predetermined temperature under the forward bias. This turn-on temperature can be shifted from 50°C to 150°C by connecting gate shunt resistance in parallel with emitter junction of the device. This device owes its features to the thyristor structure which gives contactless and latching switch, gate controlled operation and fast switching. However, several modifications have been made from conventional thyristor design in doping levels and dimensions for temperature-sensitive switching device. The structure, operation, characteristics the feature of the device are described.
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