{"title":"双通道异质晶体管与量子点系统","authors":"V. Timofeyev, E. Faleyeva","doi":"10.1109/ELNANO.2013.6552057","DOIUrl":null,"url":null,"abstract":"Two-channel field-effect heterotransistor characteristics with embedded systems of quantum dots (QDs) are presented. A physical interpretation of processes and analysis of field-velocity dependences in these structures is given. The interaction mechanism of QDs in quantum well with two-dimensional electron gas in high electric fields related to the polar optical phonon influence and charge carriers' emission from QDs is described.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-channel heterotransistors with quantum dots systems\",\"authors\":\"V. Timofeyev, E. Faleyeva\",\"doi\":\"10.1109/ELNANO.2013.6552057\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two-channel field-effect heterotransistor characteristics with embedded systems of quantum dots (QDs) are presented. A physical interpretation of processes and analysis of field-velocity dependences in these structures is given. The interaction mechanism of QDs in quantum well with two-dimensional electron gas in high electric fields related to the polar optical phonon influence and charge carriers' emission from QDs is described.\",\"PeriodicalId\":443634,\"journal\":{\"name\":\"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELNANO.2013.6552057\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELNANO.2013.6552057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-channel heterotransistors with quantum dots systems
Two-channel field-effect heterotransistor characteristics with embedded systems of quantum dots (QDs) are presented. A physical interpretation of processes and analysis of field-velocity dependences in these structures is given. The interaction mechanism of QDs in quantum well with two-dimensional electron gas in high electric fields related to the polar optical phonon influence and charge carriers' emission from QDs is described.