Zhibin He, Xubin Jing, Jian Cao, Yuming Qiu, Junhua Yan, Jun Zhou, A. Pang
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40Nm contact related process optimization for defect reduction
Ni (Nickel) piping, Contact openness, and W (Tungsten) recess are three major defects encountered in 40nm Contact related process development. In this paper, PAI (Pre- Amorphous Implantation) and Ni capping layer were optimized for Ni piping reduction. Contact etch process window was enlarged to eliminate Contact openness. The specific PMOS-localized defect phenomenon was studied. High ILD (Interlayer Dielectric) CMP oxide loss was found responsible to cause poor post-CMP uniformity, which was the main contributor to W recess defect thereafter. Finally, we had obtained an effective ILD thickness and uniformity control in CMP and thus, solving W recess defect.
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