400 kHz sic - mosfet高频逆变器,用于微小外来金属颗粒检测

Takuya Shijo, Shinya Kurachi, Yujiro Noda, H. Yamada, Toshihiko Tanaka
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引用次数: 6

摘要

本文介绍了一种利用400 kHz sic - mosfet高频逆变器检测微小外来金属颗粒的方法。构建并测试了400 kHz sic - mosfet高频逆变器,并将其应用于感应加热的高性能化学薄膜(HPCFs)上的微小外来金属颗粒检测。实验结果表明,所研制的400 kHz sic - mosfet高频逆变器可以对HPCFs上的微小外来金属颗粒进行IH加热。因此,借助热像仪以及构建的400 kHz sic - mosfet高频逆变器,可以检测到小的外来金属颗粒。为了提高所构建的高频逆变器的功率转换效率,详细分析了硅基mosfet的损耗。实验结果还表明,两个sic - mosfet并联可有效降低损耗,功率转换效率为96.8%,提高1.9%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 400 kHz SiC-MOSFETs high-frequency inverter for small-foreign-metal particle detection
This paper presents the detection of small-foreign-metal particles using a 400 kHz SiC-MOSFETs high-frequency inverter. A 400 kHz SiC-MOSFETs high-frequency inverter is constructed and tested, and then applied to the small-foreign-metal particles detection on high-performance chemical films (HPCFs) with induction heating (IH). Experimental results demonstrate that the developed 400 kHz SiC-MOSFETs high-frequency inverter can heat small-foreign-metal particle on HPCFs with IH. Thus, small-foreign-metal particle can be detected with the help of a thermographic camera along with the constructed 400 kHz SiC-MOSFETs high-frequency inverter. Losses caused by SiC-MOSFETs are analyzed in detail to improve power conversion efficiency of the constructed high-frequency inverter. Experimental results also demonstrate that parallel connections of two SiC-MOSFETs effectively reduces the losses, where power conversion efficiency is 96.8 % and improved by 1.9 %.
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