{"title":"硅晶闸管结构的近红外电致发光及其应用前景","authors":"R. Mozhaev, A. Pechenkin, M. Gorbunov","doi":"10.1109/MWENT55238.2022.9802395","DOIUrl":null,"url":null,"abstract":"The paper presents a review of technological approaches of near-IR electroluminescence obtained in silicon. It was proven that the radiance was not of thermal type. The electroluminescence of a thyristor structure induced by the impact of focused laser pulse is demonstrated. Examples of light-emitting structures manufactured using commonly available technologies are shown.","PeriodicalId":218866,"journal":{"name":"2022 Moscow Workshop on Electronic and Networking Technologies (MWENT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Near-Infrared Electroluminescence of Silicon Thyristor Structure and Its Possible Applications\",\"authors\":\"R. Mozhaev, A. Pechenkin, M. Gorbunov\",\"doi\":\"10.1109/MWENT55238.2022.9802395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a review of technological approaches of near-IR electroluminescence obtained in silicon. It was proven that the radiance was not of thermal type. The electroluminescence of a thyristor structure induced by the impact of focused laser pulse is demonstrated. Examples of light-emitting structures manufactured using commonly available technologies are shown.\",\"PeriodicalId\":218866,\"journal\":{\"name\":\"2022 Moscow Workshop on Electronic and Networking Technologies (MWENT)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Moscow Workshop on Electronic and Networking Technologies (MWENT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWENT55238.2022.9802395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Moscow Workshop on Electronic and Networking Technologies (MWENT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWENT55238.2022.9802395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Near-Infrared Electroluminescence of Silicon Thyristor Structure and Its Possible Applications
The paper presents a review of technological approaches of near-IR electroluminescence obtained in silicon. It was proven that the radiance was not of thermal type. The electroluminescence of a thyristor structure induced by the impact of focused laser pulse is demonstrated. Examples of light-emitting structures manufactured using commonly available technologies are shown.