纳米三栅极finfet的可变性:预测与分析方法

2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) Pub Date : 2014-12-01 DOI:10.1109/ICECS.2014.7050084

D. Tassis, I. Messaris, N. Fasarakis, A. Tsormpatzoglou, S. Nikolaidis, C. Dimitriadis

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引用次数: 2

摘要

我们的分析紧凑漏极电流模型用于未掺杂或轻掺杂的纳米级finfet已成功地用于预测finfet电特性的可变性。该模型的简化版本的性能几乎与解析模型一样好，但更节省计算时间。该模型在verilog-A中的实现可用于预测电路中的可变性，如逆变器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Variability of nanoscale triple gate FinFETs: Prediction and analysis method

Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characteristics of FinFETs. A simplified version of the model behaves almost as good as the analytical model but is more computational time efficient. Implementation of the models in verilog-A can be used to predict variability in circuits such as the inverter.

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来源期刊

2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)

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