采用分段p基的横向双通道发射极开关晶闸管

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764100

D. Byeon, J. Oh, M. Han, Y. Choi

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摘要

为了消除回跳和减小正向压降，提出了一种新的采用分段p基的横向双通道发射极开关晶闸管，称为横向SB-DCEST。制备的横向SB-DCEST的正向I-V特性表明，由于晶闸管工作的增强，与传统的横向DCEST相比，几乎消除了回跳问题，并且获得了1 V的正向压降。

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Lateral dual channel emitter switched thyristor employing segmented p-base

A new lateral dual channel emitter switched thyristor employing segmented p-base, entitled the lateral SB-DCEST, is proposed in order to eliminate the snap-back and to decrease the forward voltage drop. The forward I-V characteristics of the fabricated lateral SB-DCEST show that the snap-back problem is almost eliminated and a lower forward voltage drop by 1 V is obtained when compared with the conventional lateral DCEST due to the enhanced thyristor operation.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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