{"title":"采用双极性碳纳米管晶体管设计的三元内容可寻址存储单元","authors":"Kundan Nepal","doi":"10.1109/NEWCAS.2012.6329046","DOIUrl":null,"url":null,"abstract":"This paper explores the use of carbon nanotube transistors and their ambipolar properties to create ternary content addressable memory (CAM) cells. We show designs and simulation results for a traditional ternary cell created using two storage elements as well as an area efficient (up to 31% lower) truly 3-valued ternary cell.","PeriodicalId":122918,"journal":{"name":"10th IEEE International NEWCAS Conference","volume":"179 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Ternary content addressable memory cells designed using ambipolar carbon nanotube transistors\",\"authors\":\"Kundan Nepal\",\"doi\":\"10.1109/NEWCAS.2012.6329046\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper explores the use of carbon nanotube transistors and their ambipolar properties to create ternary content addressable memory (CAM) cells. We show designs and simulation results for a traditional ternary cell created using two storage elements as well as an area efficient (up to 31% lower) truly 3-valued ternary cell.\",\"PeriodicalId\":122918,\"journal\":{\"name\":\"10th IEEE International NEWCAS Conference\",\"volume\":\"179 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"10th IEEE International NEWCAS Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS.2012.6329046\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"10th IEEE International NEWCAS Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2012.6329046","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ternary content addressable memory cells designed using ambipolar carbon nanotube transistors
This paper explores the use of carbon nanotube transistors and their ambipolar properties to create ternary content addressable memory (CAM) cells. We show designs and simulation results for a traditional ternary cell created using two storage elements as well as an area efficient (up to 31% lower) truly 3-valued ternary cell.