{"title":"60 MeV质子束nSYNC ASIC辐射硬度测试","authors":"D. Brundu, S. Cadeddu, A. Cardini, L. Casu","doi":"10.22323/1.343.0124","DOIUrl":null,"url":null,"abstract":"The nSYNC chip is a radiation tolerant custom ASIC, developed in UMC 130 nm technology for the upgrade of the readout electronics of the LHCb Muon System. The chip will work, over ten years of upgrade operation, in a radioactive environment and exposed to a total dose of 13 krad and a fluence of 2 · 1012 cm 2 1-MeV neutrons equivalent. The results of radiation tests performed at the Catana facility (INFN Laboratori Nazionali del Sud) with 60 MeV proton beam are discussed, with a particular focus on the internal logic and TDC performance, and Single Event Effects measurements.","PeriodicalId":400748,"journal":{"name":"Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Radiation hardness test of the nSYNC ASIC with 60 MeV proton beam\",\"authors\":\"D. Brundu, S. Cadeddu, A. Cardini, L. Casu\",\"doi\":\"10.22323/1.343.0124\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The nSYNC chip is a radiation tolerant custom ASIC, developed in UMC 130 nm technology for the upgrade of the readout electronics of the LHCb Muon System. The chip will work, over ten years of upgrade operation, in a radioactive environment and exposed to a total dose of 13 krad and a fluence of 2 · 1012 cm 2 1-MeV neutrons equivalent. The results of radiation tests performed at the Catana facility (INFN Laboratori Nazionali del Sud) with 60 MeV proton beam are discussed, with a particular focus on the internal logic and TDC performance, and Single Event Effects measurements.\",\"PeriodicalId\":400748,\"journal\":{\"name\":\"Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.22323/1.343.0124\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22323/1.343.0124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
nSYNC芯片是一款耐辐射定制专用集成电路,采用联华电子130纳米技术开发,用于升级LHCb μ子系统的读出电子器件。经过10年的升级操作,该芯片将在放射性环境中工作,并暴露在总剂量为13克拉和2·1012 cm 2 1-MeV中子当量的影响下。讨论了在Catana设施(INFN实验室Nazionali del Sud)进行的60 MeV质子束辐射测试的结果,特别侧重于内部逻辑和TDC性能,以及单事件效应测量。
Radiation hardness test of the nSYNC ASIC with 60 MeV proton beam
The nSYNC chip is a radiation tolerant custom ASIC, developed in UMC 130 nm technology for the upgrade of the readout electronics of the LHCb Muon System. The chip will work, over ten years of upgrade operation, in a radioactive environment and exposed to a total dose of 13 krad and a fluence of 2 · 1012 cm 2 1-MeV neutrons equivalent. The results of radiation tests performed at the Catana facility (INFN Laboratori Nazionali del Sud) with 60 MeV proton beam are discussed, with a particular focus on the internal logic and TDC performance, and Single Event Effects measurements.