550v超结3.9 /spl ω /mm/sup 2/晶体管由25mev掩膜硼注入形成

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239754

M. Rub, M. Bar, G. Deboy, F.-J. Niedemostheide, M. Schmitt, H. Schulze, A. Willmeroth

{"title":"550v超结3.9 /spl ω /mm/sup 2/晶体管由25mev掩膜硼注入形成","authors":"M. Rub, M. Bar, G. Deboy, F.-J. Niedemostheide, M. Schmitt, H. Schulze, A. Willmeroth","doi":"10.1109/WCT.2004.239754","DOIUrl":null,"url":null,"abstract":"For the first time, we present experimental work on superjunction devices, in which the deep p-columns have been formed by a multi-step high-energy implantation. The desired blocking voltage and the Ron /spl times/ A are in the range of 500 V-600 V and about 3.5 - 4.0 /spl Omega/mm/sup 2/, respectively. Deep (32 /spl mu/m) p-n junctions were formed by using a set of five boron implantation energies ranging from 3 to 25 MeV. Masking was achieved by silicon stencil masks which were glued to the device wafers.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"550 V superjunction 3.9 /spl Omega/mm/sup 2/ transistor formed by 25 MeV masked boron implantation\",\"authors\":\"M. Rub, M. Bar, G. Deboy, F.-J. Niedemostheide, M. Schmitt, H. Schulze, A. Willmeroth\",\"doi\":\"10.1109/WCT.2004.239754\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, we present experimental work on superjunction devices, in which the deep p-columns have been formed by a multi-step high-energy implantation. The desired blocking voltage and the Ron /spl times/ A are in the range of 500 V-600 V and about 3.5 - 4.0 /spl Omega/mm/sup 2/, respectively. Deep (32 /spl mu/m) p-n junctions were formed by using a set of five boron implantation energies ranging from 3 to 25 MeV. Masking was achieved by silicon stencil masks which were glued to the device wafers.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.239754\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.239754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

我们首次在超结器件上进行了实验工作，其中通过多步高能注入形成了深p柱。所需的阻断电压和Ron /spl时间/ A分别在500 V-600 V和3.5 - 4.0 /spl ω /mm/sup 2/范围内。采用3 ~ 25 MeV的5种硼注入能形成深度(32 /spl mu/m)的p-n结。掩模是通过粘在器件晶圆上的硅模板掩模实现的。

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550 V superjunction 3.9 /spl Omega/mm/sup 2/ transistor formed by 25 MeV masked boron implantation

For the first time, we present experimental work on superjunction devices, in which the deep p-columns have been formed by a multi-step high-energy implantation. The desired blocking voltage and the Ron /spl times/ A are in the range of 500 V-600 V and about 3.5 - 4.0 /spl Omega/mm/sup 2/, respectively. Deep (32 /spl mu/m) p-n junctions were formed by using a set of five boron implantation energies ranging from 3 to 25 MeV. Masking was achieved by silicon stencil masks which were glued to the device wafers.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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