研究了Ti/W/Al-Cu(2%)多层金属化的电迁移性能

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference Pub Date : 1989-06-12 DOI:10.1109/VMIC.1989.78063

C. Martin, J. McPherson

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引用次数: 10

摘要

本文报道了在1.0 μ m层间氧化物中1.2 μ m孔中Ti/W/Al-Cu(2%)金属化的电迁移(EM)性能。使用开尔文接触应力结构，通过电阻的监测独立于电磁诱发的损伤，这种损伤发生在为通过提供服务的金属引线中。即使金属引线中电磁诱发的电阻上升高达270%，通孔电阻上升小于20%时仍保持稳定。这表明金属条纹在过孔失效之前就表现出电迁移磨损。这些结果与通孔中电流的方向无关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Via electromigration performance of Ti/W/Al-Cu(2%) multilayered metallization

Via electromigration (EM) performance of Ti/W/Al-Cu(2%) metallization is reported for 1.2- mu m vias defined in 1.0 mu m of interlevel oxide. Using a Kelvin-contact stressing structure, the via resistance was monitored independently of the EM-induced damage which occurs in the metal leads servicing the via. Even for EM-induced resistance rises of up to 270% in the metal leads, the vias remained stable with via resistance rises of less than 20%. This indicates that the metal stripes exhibit electromigration wearout well before the vias fail. These results were independent of the direction of current flow in the via.<>

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Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference

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