{"title":"光谱干涉测量技术在增强临界尺寸光学测量中的应用","authors":"D. Shafir, R. Shtainman, I. Turovets","doi":"10.1109/CSTIC52283.2021.9461449","DOIUrl":null,"url":null,"abstract":"Optical Critical Dimension (OCD) metrology has proved itself for the last decades as an enabler for advanced node semiconductor device fabrication. In this field, the current workhorses are the well-established techniques of spectral reflectometry and ellipsometry (SR/SE) techniques [1], [2]. This paper introduces a novel Spectral Interferometry method (SI) providing absolute spectral phase information to be used in advanced metrology cases, enhancing the sensitivity to the monitored structural parameters. We demonstrate the value of the SI technology for various metrology challenging use cases.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"325 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Implementation of Spectral Interferometry for Enhanced Critical Dimensions Optical Metrology\",\"authors\":\"D. Shafir, R. Shtainman, I. Turovets\",\"doi\":\"10.1109/CSTIC52283.2021.9461449\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optical Critical Dimension (OCD) metrology has proved itself for the last decades as an enabler for advanced node semiconductor device fabrication. In this field, the current workhorses are the well-established techniques of spectral reflectometry and ellipsometry (SR/SE) techniques [1], [2]. This paper introduces a novel Spectral Interferometry method (SI) providing absolute spectral phase information to be used in advanced metrology cases, enhancing the sensitivity to the monitored structural parameters. We demonstrate the value of the SI technology for various metrology challenging use cases.\",\"PeriodicalId\":186529,\"journal\":{\"name\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"325 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC52283.2021.9461449\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461449","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Implementation of Spectral Interferometry for Enhanced Critical Dimensions Optical Metrology
Optical Critical Dimension (OCD) metrology has proved itself for the last decades as an enabler for advanced node semiconductor device fabrication. In this field, the current workhorses are the well-established techniques of spectral reflectometry and ellipsometry (SR/SE) techniques [1], [2]. This paper introduces a novel Spectral Interferometry method (SI) providing absolute spectral phase information to be used in advanced metrology cases, enhancing the sensitivity to the monitored structural parameters. We demonstrate the value of the SI technology for various metrology challenging use cases.
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