Fully-scalable 2D THz radiating array: A 42-element source in 130-nm SiGe with 80-µW total radiated power at 1.01 THz

This paper presents a 1-THz radiating array using IHP 130-nm SiGe process. It is based on a highly-scalable 2D structure that uses a square grid of slots to simultaneously (1) maximize and synchronize the fundamental oscillation (ƒ0=250 GHz) and 4^th-harmonic generation (4ƒ0=1 THz) of a large array of transistors, (2) synthesize standing-wave patterns with near-field cancellation at ƒ0, 2ƒ0 and 3ƒ0 and efficient radiation at 4ƒ0. The compact design enables implementation of 42 coherent radiators on a 1-mm² area. The chip consumes 1.1-W DC power and generates 80-µW total radiated power with 13-dBm EIRP.