基于低PPM缺陷故障模型的存储器有效测试

Records of the 1993 IEEE International Workshop on Memory Testing Pub Date : 1993-08-09 DOI:10.1109/MT.1993.263142

D. Lam, S. Y. Khim

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引用次数: 1

摘要

作者描述了对故障模式和模型的理解如何能够生成更好的测试算法和模式，从而在不降低总体产量的情况下筛选出这些类型的故障。这种理解大部分是在广泛的电分析之后才产生的。介绍了作者所经历的几个案例。

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Effective tests for memories based on faults models for low PPM defects

The authors describe how an understanding of failure modes and models allows better test algorithms and patterns to be generated to screen out those type of failures without lowering the general yield. Much of this understanding comes about only after extensive electrical analysis. A few case studies experienced by the authors are presented.<>

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来源期刊

Records of the 1993 IEEE International Workshop on Memory Testing

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