用于混合信号电路的GaN hfet紧凑电路模型

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI:10.1109/LECHPD.2002.1146743

A. Conway, P. Asbeck, J. Jensen, W. Wong, M. Mokhtari, J. Moon

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引用次数: 2

摘要

本文提出了一种用于混合信号应用的GaN hfet的综合紧凑电路模型。模型中考虑了自热效应和捕集效应。模型参数可以通过拟合实测数据来确定，也可以根据几何尺寸和层结构进行分析估计。从直流到射频的测量特性都有很好的一致性。

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Compact circuit model of GaN HFETs for mixed signal circuits

This work presents a comprehensive compact circuit model of GaN HFETs for mixed signal applications. Self-heating and trapping effects are included in the model. Model parameters can be determined by fitting measured data, or estimated analytically based on geometrical dimensions and layer structure. Good agreement has been found with measured characteristics from DC to RF.

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Proceedings. IEEE Lester Eastman Conference on High Performance Devices

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