Re-S/D SOI mosfet的解析栅隧穿电流模型

2016 IEEE Uttar Pradesh Section International Conference on Electrical, Computer and Electronics Engineering (UPCON) Pub Date : 1900-01-01 DOI:10.1109/UPCON.2016.7894619

P. Tiwari, Arun Kumar, Dipankar Talukdar

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引用次数: 1

摘要

本文提出了一种深埋源极漏极(Re-S/D) SOI MOSFET的直接栅隧穿电流解析模型。通过改变栅极绝缘子厚度和漏极源电压等参数，分析了栅极隧穿电流的特性。研究了高k介电常数对栅隧穿电流的影响。利用二维ATLAS工具对模型结果进行了验证。

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An analytical gate tunneling current model of Re-S/D SOI MOSFETs

This paper presents an analytical direct gate tunneling current model of recessed-source/drain(Re-S/D) SOI MOSFET. The gate tunneling current behavior has been analyzed by varying different parameters like gate insulator thickness and drain to source voltage. The gate tunneling current has been investigated with the effect of high-k dielectric constant. 2D ATLAS tool has been used to validate the model results.

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来源期刊

2016 IEEE Uttar Pradesh Section International Conference on Electrical, Computer and Electronics Engineering (UPCON)

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