用复合矩形膜的载荷-挠度法测量薄膜的力学性能

IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots' Pub Date : 1989-02-20 DOI:10.1109/MEMSYS.1989.77981

O. Tabata, K. Kawahata, S. Sugiyama, I. Igarashi

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引用次数: 72

摘要

薄膜的内应力和杨氏模量是通过测量材料矩形膜的挠度与压力的关系来确定的。为了减小由于泊松比未知导致的杨氏模量测量误差，采用2mm × 8mm矩形膜。测量是用计算机测量系统进行的。对低压化学气相沉积(LPCVD)氮化硅薄膜进行了表征，发现其内应力为1.0 GPa，杨氏模量为290 GPa。利用这种复合膜技术，对LPCVD多晶硅膜和等离子体cvd氮化硅膜进行了表征。LPCVD多晶硅膜的内应力和杨氏模量分别为-0.18 GPa和160 GPa，等离子体cvd氮化硅膜的内应力和杨氏模量分别为0.11 GPa和210 GPa。

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Mechanical property measurements of thin films using load-deflection of composite rectangular membrane

The internal stress and Young's modulus of thin films are determined by measuring the deflection versus pressure of the rectangular membranes of materials. In order to reduce the measurement error for the Young's modulus due to an unknown Poisson's ratio, a 2 mm*8 mm rectangular membrane is adopted. Measurements are made by using a computerized measurement system. Low-pressure chemical-vapor-deposited (LPCVD) silicon nitride films are characterized and found to have an internal stress of 1.0 GPa and a Young's modulus of 290 GPa. By using this composite membrane technique, an LPCVD polysilicon film and a plasma-CVD silicon nitride film are characterized. The internal stress and Young's modulus were found to be -0.18 GPa and 160 GPa for the LPCVD polysilicon film and 0.11 GPa and 210 GPa for the plasma-CVD silicon nitride film.<>

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IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'

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