高压高频硅双极晶体管

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764120

D. Grădinaru, W. Ng, C. Salama

{"title":"高压高频硅双极晶体管","authors":"D. Grădinaru, W. Ng, C. Salama","doi":"10.1109/ISPSD.1999.764120","DOIUrl":null,"url":null,"abstract":"In this paper, a novel design concept for a high voltage RF silicon BJT structure is introduced. Closely spaced p/sup +/ base contact diffusions are used to guard the thin base region, allowing independent tailoring of the breakdown voltage and high frequency performance.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High voltage high frequency silicon bipolar transistors\",\"authors\":\"D. Grădinaru, W. Ng, C. Salama\",\"doi\":\"10.1109/ISPSD.1999.764120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel design concept for a high voltage RF silicon BJT structure is introduced. Closely spaced p/sup +/ base contact diffusions are used to guard the thin base region, allowing independent tailoring of the breakdown voltage and high frequency performance.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764120\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了一种新型高频硅BJT结构的设计思想。紧密间隔的p/sup +/基极接触扩散用于保护薄基极区域，允许独立定制击穿电压和高频性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High voltage high frequency silicon bipolar transistors

In this paper, a novel design concept for a high voltage RF silicon BJT structure is introduced. Closely spaced p/sup +/ base contact diffusions are used to guard the thin base region, allowing independent tailoring of the breakdown voltage and high frequency performance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

自引率

0.00%

发文量