{"title":"深亚微米dram中的串扰","authors":"Zemo Yang, S. Mourad","doi":"10.1109/MTDT.2000.868626","DOIUrl":null,"url":null,"abstract":"This study examines the effect of crosstalk on the operations of DRAMs that are implemented in deep submicron technology, 0.18 µm. An extensive simulation revealed that the coupling between word lines and between bit lines alter the cell contents during reading and writing operations as well as retention of the different cells The effect is more likely when the poly instead of aluminum is used. Coupling between bit and word lines did not have such serious outcome.","PeriodicalId":396830,"journal":{"name":"Memory Technology, Design, and Testing","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Crosstalk in Deep Submicron DRAMs\",\"authors\":\"Zemo Yang, S. Mourad\",\"doi\":\"10.1109/MTDT.2000.868626\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study examines the effect of crosstalk on the operations of DRAMs that are implemented in deep submicron technology, 0.18 µm. An extensive simulation revealed that the coupling between word lines and between bit lines alter the cell contents during reading and writing operations as well as retention of the different cells The effect is more likely when the poly instead of aluminum is used. Coupling between bit and word lines did not have such serious outcome.\",\"PeriodicalId\":396830,\"journal\":{\"name\":\"Memory Technology, Design, and Testing\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Memory Technology, Design, and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.2000.868626\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Memory Technology, Design, and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2000.868626","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This study examines the effect of crosstalk on the operations of DRAMs that are implemented in deep submicron technology, 0.18 µm. An extensive simulation revealed that the coupling between word lines and between bit lines alter the cell contents during reading and writing operations as well as retention of the different cells The effect is more likely when the poly instead of aluminum is used. Coupling between bit and word lines did not have such serious outcome.
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