具有低读取延迟(18ns)，高非线性(>5000)和超低漏电流(~pA)自选择单元的16层3D垂直RRAM

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2023-06-11 DOI:10.23919/VLSITechnologyandCir57934.2023.10185341

Yaxin Ding, Jianguo Yang, Yu Liu, Jianfeng Gao, Yuan Wang, Pengfei Jiang, Shuxian Lv, Yuting Chen, Boping Wang, Wei Wei, Tiancheng Gong, Kanhao Xue, Q. Luo, Xiangshui Miao, Ming Liu

{"title":"具有低读取延迟(18ns)，高非线性(>5000)和超低漏电流(~pA)自选择单元的16层3D垂直RRAM","authors":"Yaxin Ding, Jianguo Yang, Yu Liu, Jianfeng Gao, Yuan Wang, Pengfei Jiang, Shuxian Lv, Yuting Chen, Boping Wang, Wei Wei, Tiancheng Gong, Kanhao Xue, Q. Luo, Xiangshui Miao, Ming Liu","doi":"10.23919/VLSITechnologyandCir57934.2023.10185341","DOIUrl":null,"url":null,"abstract":"On-current and nonlinearity of selector-less RRAM are essential for improving the sensing speed and suppressing sneak path leakage respectively in 3D vertical crossbar structure. In this work, by using an oxide in which oxygen vacancies do not readily accumulate (NbOx) to prepare the memory layer, 50x on-state current density improvement is achieved with high nonlinearity of 5000. The maximum nonlinearity of this device is even higher $(8 \\times 10 ^{4}$ read @ 1.04 V). Furthermore, for the first time, we present a 16-layer 3D vertical RRAM. Other outstanding performances such as low off-current (~ pA), self-compliance and high endurance (> 108) are also demonstrated.","PeriodicalId":317958,"journal":{"name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pA) Self-Selective Cells\",\"authors\":\"Yaxin Ding, Jianguo Yang, Yu Liu, Jianfeng Gao, Yuan Wang, Pengfei Jiang, Shuxian Lv, Yuting Chen, Boping Wang, Wei Wei, Tiancheng Gong, Kanhao Xue, Q. Luo, Xiangshui Miao, Ming Liu\",\"doi\":\"10.23919/VLSITechnologyandCir57934.2023.10185341\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"On-current and nonlinearity of selector-less RRAM are essential for improving the sensing speed and suppressing sneak path leakage respectively in 3D vertical crossbar structure. In this work, by using an oxide in which oxygen vacancies do not readily accumulate (NbOx) to prepare the memory layer, 50x on-state current density improvement is achieved with high nonlinearity of 5000. The maximum nonlinearity of this device is even higher $(8 \\\\times 10 ^{4}$ read @ 1.04 V). Furthermore, for the first time, we present a 16-layer 3D vertical RRAM. Other outstanding performances such as low off-current (~ pA), self-compliance and high endurance (> 108) are also demonstrated.\",\"PeriodicalId\":317958,\"journal\":{\"name\":\"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185341\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185341","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在三维垂直横杆结构中，无选择器RRAM的有电流特性和非线性特性分别对提高传感速度和抑制潜道泄漏至关重要。在这项工作中，通过使用不容易积累氧空位的氧化物(NbOx)来制备记忆层，在5000的高非线性下实现了50倍的导通电流密度提高。该器件的最大非线性甚至更高(8 \times 10 ^{4}$ read @ 1.04 V)。此外，我们首次提出了16层3D垂直RRAM。此外，该器件还具有低断流(~ pA)、自顺应性和高耐久性(> 108)等优异性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pA) Self-Selective Cells

On-current and nonlinearity of selector-less RRAM are essential for improving the sensing speed and suppressing sneak path leakage respectively in 3D vertical crossbar structure. In this work, by using an oxide in which oxygen vacancies do not readily accumulate (NbOx) to prepare the memory layer, 50x on-state current density improvement is achieved with high nonlinearity of 5000. The maximum nonlinearity of this device is even higher $(8 \times 10 ^{4}$ read @ 1.04 V). Furthermore, for the first time, we present a 16-layer 3D vertical RRAM. Other outstanding performances such as low off-current (~ pA), self-compliance and high endurance (> 108) are also demonstrated.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

自引率

0.00%

发文量