不同隧道二极管对多结III-V型太阳能电池效率的影响

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI:10.1109/SMELEC.2014.6920856

H. Yu, Hong-Quan Nguyen, Chen-Chen Chung, Ching-Hsiang Hsu, C. Hsiao, E. Chang

{"title":"不同隧道二极管对多结III-V型太阳能电池效率的影响","authors":"H. Yu, Hong-Quan Nguyen, Chen-Chen Chung, Ching-Hsiang Hsu, C. Hsiao, E. Chang","doi":"10.1109/SMELEC.2014.6920856","DOIUrl":null,"url":null,"abstract":"InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is found that the solar cells with P++-AlGaAs/N++-GaAs TDs grown on 10° off GaAs substrates show a higher external quantum efficiency (EQE) but also generate a higher peak current density (Jpeak) than the solar cells with P++-GaAs/N++-InGaP TDs grown on 10°off GaAs substrates. Furthermore, smooth surface (rms roughness: 1.54 Å) and sharp interface for the GaAs/Al0.3Ga0.7As TDs were obtained when the (100) tilted 10° off toward [111] GaAs substrate was used. The conversion efficiency of InGaP/GaAs dual-junction solar cell with N++-GaAs/P++-AlGaAs TD grown on the (100) tilted 10° off toward (111) GaAs substrate is close to 20%.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Effect of different tunnel diodes on the efficiency of multi-junction III-V solar cells\",\"authors\":\"H. Yu, Hong-Quan Nguyen, Chen-Chen Chung, Ching-Hsiang Hsu, C. Hsiao, E. Chang\",\"doi\":\"10.1109/SMELEC.2014.6920856\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is found that the solar cells with P++-AlGaAs/N++-GaAs TDs grown on 10° off GaAs substrates show a higher external quantum efficiency (EQE) but also generate a higher peak current density (Jpeak) than the solar cells with P++-GaAs/N++-InGaP TDs grown on 10°off GaAs substrates. Furthermore, smooth surface (rms roughness: 1.54 Å) and sharp interface for the GaAs/Al0.3Ga0.7As TDs were obtained when the (100) tilted 10° off toward [111] GaAs substrate was used. The conversion efficiency of InGaP/GaAs dual-junction solar cell with N++-GaAs/P++-AlGaAs TD grown on the (100) tilted 10° off toward (111) GaAs substrate is close to 20%.\",\"PeriodicalId\":268203,\"journal\":{\"name\":\"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2014.6920856\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2014.6920856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

研究了在定向错误的GaAs衬底上生长不同隧道二极管(td)的InGaP/GaAs双结太阳能电池。结果表明，与10°off GaAs衬底生长的P++-AlGaAs/N++-GaAs TDs相比，在10°off GaAs衬底上生长的P++-GaAs/N++ -GaAs TDs具有更高的外量子效率(EQE)和峰值电流密度(Jpeak)。此外，当(100)向[111]GaAs衬底倾斜10°时，获得了光滑的表面(rms粗糙度:1.54 Å)和锐利的界面。N++-GaAs/P++-AlGaAs TD生长在(100)向(111)GaAs衬底倾斜10°的InGaP/GaAs双结太阳能电池的转换效率接近20%。

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Effect of different tunnel diodes on the efficiency of multi-junction III-V solar cells

InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is found that the solar cells with P⁺⁺-AlGaAs/N⁺⁺-GaAs TDs grown on 10° off GaAs substrates show a higher external quantum efficiency (EQE) but also generate a higher peak current density (J_peak) than the solar cells with P⁺⁺-GaAs/N⁺⁺-InGaP TDs grown on 10°off GaAs substrates. Furthermore, smooth surface (rms roughness: 1.54 Å) and sharp interface for the GaAs/Al_0.3Ga_0.7As TDs were obtained when the (100) tilted 10° off toward [111] GaAs substrate was used. The conversion efficiency of InGaP/GaAs dual-junction solar cell with N⁺⁺-GaAs/P⁺⁺-AlGaAs TD grown on the (100) tilted 10° off toward (111) GaAs substrate is close to 20%.

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2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

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