{"title":"用Volterra级数法预测MESFET器件的宽带功率性能","authors":"C. Law, C. Aitchison","doi":"10.1109/MWSYM.1986.1132228","DOIUrl":null,"url":null,"abstract":"Power performance of a medium power GaAs MESFET is predicted over the frequency range from 2GHz to 16GHz using a non-linear model where the non-linearities represented by power series up to the third order are derived from D.C. and low-frequency measurements. The analysis employs the Volterra series representation up to the third order. Experimental verification is made on a NE9000 medium power MESFET device. The agreement between predicted and measured output power at one dB. gain compression is within +- 0.5dB across the 2-16GHz band.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Prediction of Wideband Power Performance of MESFET Devices Using the Volterra Series Representation\",\"authors\":\"C. Law, C. Aitchison\",\"doi\":\"10.1109/MWSYM.1986.1132228\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Power performance of a medium power GaAs MESFET is predicted over the frequency range from 2GHz to 16GHz using a non-linear model where the non-linearities represented by power series up to the third order are derived from D.C. and low-frequency measurements. The analysis employs the Volterra series representation up to the third order. Experimental verification is made on a NE9000 medium power MESFET device. The agreement between predicted and measured output power at one dB. gain compression is within +- 0.5dB across the 2-16GHz band.\",\"PeriodicalId\":109161,\"journal\":{\"name\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1986.1132228\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1986.1132228","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Prediction of Wideband Power Performance of MESFET Devices Using the Volterra Series Representation
Power performance of a medium power GaAs MESFET is predicted over the frequency range from 2GHz to 16GHz using a non-linear model where the non-linearities represented by power series up to the third order are derived from D.C. and low-frequency measurements. The analysis employs the Volterra series representation up to the third order. Experimental verification is made on a NE9000 medium power MESFET device. The agreement between predicted and measured output power at one dB. gain compression is within +- 0.5dB across the 2-16GHz band.
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