通过反向偏置具有多个Vt的最低可变性SOI finfet

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894393

T. Matsukawa, K. Fukuda, Y. Liu, K. Endo, J. Tsukada, H. Yamauchi, Y. Ishikawa, S. O'Uchi, W. Mizubayashi, S. Migita, Y. Morita, H. Ota, M. Masahara

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引用次数: 16

摘要

具有非晶金属栅极(MG)的finfet是在薄埋氧化物(SOTB)硅片上制造的，以实现低可变性和可调的阈值电压(Vt)，这是多重Vt溶液所必需的。与块体和SOI平面mosfet相比，具有非晶TaSiN MG的finfet记录了最低的on-state漏极电流(Ion)可变性(0.37% μm)，这得益于抑制了Vt (AVt=1.32 mVμm)的可变性，漏极诱导势垒降低(DIBL)和跨电导(Gm)。通过SOTB的反向偏置提供了优异的Vt可控性，与通过鳍通道掺杂进行Vt调谐相比，保持了较低的Vt可变性。

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Lowest variability SOI FinFETs having multiple Vt by back-biasing

FinFETs with an amorphous metal gate (MG) are fabricated on silicon-on-thin-buried-oxide (SOTB) wafers for realizing both low variability and tunable threshold voltage (V_t) necessary for multiple V_t solution. The FinFETs with an amorphous TaSiN MG record the lowest on-state drain current (I_on) variability (0.37 %μm) in comparison to bulk and SOI planar MOSFETs thanks to the suppressed variability of V_t (A_Vt=1.32 mVμm), drain induced barrier lowering (DIBL) and trans-conductance (G_m). Back-biasing through the SOTB provides excellent V_t controllability keeping the low V_t variability in contrast to V_t tuning by fin channel doping.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量