氮化镓半导体太阳能电池降压-升压最大功率点跟踪的研究

Masayoshi Hamanaka, T. Matsuyama, K. Yukita, Y. Goto, T. Matsumura
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引用次数: 1

摘要

由于光伏(PV)系统中使用的太阳能电池的特性,由于云层、太阳高度和安装环境中的障碍物等因素,太阳辐射的波动会导致发电功率的波动。此时,在最大功率点跟踪(MPPT)控制范围内可能发生发电量变化。如果不能绕过低发电量区域,则会降低总发电量。因此,系统的高效运行将是一件困难的事情。为了解决这个问题,作者开发了一个buck-boost MPPT,可以配置为分布式MPPT。此外,为了提高效率,使用了GaN场效应晶体管(FET),而不是传统的Si场效应晶体管。在这项研究中,我们发现使用GaN半导体的MPPT比使用Si半导体的MPPT效率更高。此外,当光伏组件上形成部分阴影时,分布式MPPT比集中式MPPT能发挥更高的发电效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of buck-boost maximum power point tracking for a solar cell using GaN semiconductor
Owing to the characteristics of solar cells used in photovoltaic (PV) systems, solar radiation fluctuations due to clouds, sun altitude, and obstacles in the installation environment lead to fluctuation in the generated power. At this point of time, variations in power generation may occur within the range of maximum power point tracking (MPPT) control. If the area with low power generation cannot be bypassed, the overall power generation is reduced. Thus, system operation with high efficiency is expected to be difficult. To cope with this problem, the authors developed a buck-boost MPPT that can be configured as a distributed MPPT. Furthermore, to improve efficiency, a GaN field-effect transistor (FET), rather than the conventional Si FET, was used. In this research, we showed that the MPPT using GaN semiconductors is more efficient than MPPT using Si semiconductors. In addition, it was found that when partial shadows were formed on the PV module, the distributed MPPT could exert higher power generation efficiency than the concentrated type.
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