基于0.5 μm CMOS技术的肖特基二极管UHF RFID无源标签电压发生器

A. Navarro, J. L. del Valle
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引用次数: 2

摘要

基于肖特基二极管的电压发生器一直是为RFID应用构建无源标签的首选设计选项。主要的设计约束通常是电源直流电压、负载电流、载波频率和天线辐射电阻。尽管在这种情况下,本文所描述的工作已经应用了设计方法来确定基本的设计参数:肖特基二极管的尺寸,电路的级数以及应付设计规格所需的可用功率。由于肖特基二极管不是我们的0.5 μ m CMOS设施的可用器件,因此我们通过应用该技术的技术设计规则来设计它们。为此,考虑到半导体物理的基础知识,首先在ISE上模拟了I-V和C-V特性。从仿真结果中我们发现,为了提供所需的电流和电压,需要三个级
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Voltage Generator for UHF RFID Passive Tags using Schottky diodes based on a 0.5 μm CMOS Technology
Voltage generators based on Schottky diodes have been the preferred design option to build passive tags for RFID applications. The main design constrains are commonly supply DC voltage, load current, carrier frequency, and antenna radiation resistance. In spite of this scenario the work described in this paper has applied the design methodology presented to determine basic design parameters: Schottky diode's size, stage's number of the circuit and also the necessary available power to cope with design's specifications. Since Schottky diodes is not an available device of our 0.5 mum CMOS facilities, we have designed them by applying technological design rules of that technology. To do that, the I-V and C-V characteristics were simulated firstly on ISE by considering basics on semiconductor physics. From simulations results we have found that are needed three stages in order to supply the needed current and voltage
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