纯ZrO2与掺Al ZrO2 MIM电容器可靠性比较

K. Seidel, W. Weinreich, P. Polakowski, D. Triyoso, M. Nolan, K. Yiang, S. Chu
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引用次数: 6

摘要

在本文中,作者证明了在BEOL中ZrO2基介电体的al掺杂浓度对电学性能和可靠性有很大影响。尽管未掺杂的ZrO2具有剧烈的场加速度,但存在早期失效和不受控制的泄漏机制。高铝浓度也会导致泄漏电流增大,可靠性降低。为了获得良好的场加速度和电容密度以及低泄漏电流,建议只使用小浓度的al掺杂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reliability comparison of pure ZrO2 and Al− doped ZrO2 MIM capacitors
In this paper, the authors have shown that the Al-doping concentration of ZrO2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO2 suffers from early failures and uncontrolled leakage mechanisms. High Al-concentrations also show higher leakage current and less reliability. It is recommended to apply only small Al-doping concentrations in order to benefit from good field acceleration and capacitance density as well as low leakage current.
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