量子调制对MOSFET亚阈区反转电荷的影响

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948816

G. Hiblot, Q. Rafhay, F. Boeuf, G. Ghibaudo

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引用次数: 5

摘要

在这项工作中，量子调制的电荷在亚阈值制度的影响研究了各种结构。利用Hänsch模型，研究了双栅极中量子效应对阈值电压滚降的影响。接下来，通过Poisson-Schrödinger模拟证明，与长通道体器件中的Si通道相比，InAs通道的亚阈值摆动有量子诱导的增加。最后，对大体积亚阈值摆动经典模型进行了修正，并进行了仿真验证。结果表明，与双栅器件相反，电荷的量子调制对体结构的亚阈值范围有影响。

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Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime

In this work, the impact of quantum modulation of the charge in the subtreshold regime is investigated for various architectures. Using Hänsch's model, the reduction in threshold voltage roll-off induced by quantum effects in a double gate is investigated. Next, it is demonstrated with Poisson-Schrödinger simulations that there is a quantum-induced increase in sub-threshold swing for an InAs channel compared to a Si channel in a long-channel bulk device. Finally, a correction to the Bulk subthreshold swing classical model is proposed and validated on simulations. The results suggest that, contrary to double-gate devices, quantum modulation of the charge has an impact in the subthreshold regime for bulk architectures.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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