500v 3a单片逆变电路横向IGBT设计的改进

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764125

A. Nakagawa, H. Funaki, Y. Yamaguchi, F. Suzuki

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引用次数: 58

摘要

本文首次报道了500v, 3a单片机逆变电路的研制。该IC的芯片尺寸为7.1/spl倍/5.2 mm/sup 2/，仅比500a、1a逆变器IC大30%。通过提高35%的横向IGBT导通电阻和优化的IGBT单元电池和键合垫布局，实现了芯片尺寸的减小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improvement in lateral IGBT design for 500 V 3 A one chip inverter ICs

This paper reports, for the first time, the development of 500 V, 3 A single chip inverter ICs. The chip size of the IC is 7.1/spl times/5.2 mm/sup 2/, which is only 30% larger than that of 500 A, 1 A inverter ICs. The chip size reduction has been realized by 35% improvement in lateral IGBT on-resistance and an optimized layout of LIGBT unit cells and bonding pads.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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