Al Mamun Mizan, Syeda Fahima Nazreen, Saqlain Ashraf, A. Z. M. Tahmidul Kabir, John Maxwell Gomes, Sristy Karmoker, Nazmus Sakib Nabil, Md. Kabiruzzaman
{"title":"不同栅极材料对硅基MOSFET性能的影响","authors":"Al Mamun Mizan, Syeda Fahima Nazreen, Saqlain Ashraf, A. Z. M. Tahmidul Kabir, John Maxwell Gomes, Sristy Karmoker, Nazmus Sakib Nabil, Md. Kabiruzzaman","doi":"10.1109/ICREST57604.2023.10070064","DOIUrl":null,"url":null,"abstract":"In this paper, Silicon-based MOSFET has been investigated with different gate oxides for knowing which oxide shows the best result. Silicon-di oxide (SiO<inf>2</inf>), gallium oxide (Ga<inf>2</inf>O<inf>3</inf>), and aluminum oxide (Al<inf>2</inf>O<inf>3</inf>) have been used as gate materials for observing the sensitivity, threshold voltage, and drain current of the MOSFET in this study. Al<inf>2</inf>O<inf>3</inf> gate material gives the highest terminal current and faster turn-on voltage (0.7 V) of the MOSFET compared to the other two. Al<inf>2</inf>O<inf>3</inf> delivers the best performance; and hence, it could be a promising material for the gate layer. In addition, electron and hole concentrations of those gate oxides and electric potential have been compared. In this paper, COMSOL Multiphysics® software has been used to simulate the obtained results.","PeriodicalId":389360,"journal":{"name":"2023 3rd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of Different Gate Materials on Performance of Si Based MOSFET\",\"authors\":\"Al Mamun Mizan, Syeda Fahima Nazreen, Saqlain Ashraf, A. Z. M. Tahmidul Kabir, John Maxwell Gomes, Sristy Karmoker, Nazmus Sakib Nabil, Md. Kabiruzzaman\",\"doi\":\"10.1109/ICREST57604.2023.10070064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, Silicon-based MOSFET has been investigated with different gate oxides for knowing which oxide shows the best result. Silicon-di oxide (SiO<inf>2</inf>), gallium oxide (Ga<inf>2</inf>O<inf>3</inf>), and aluminum oxide (Al<inf>2</inf>O<inf>3</inf>) have been used as gate materials for observing the sensitivity, threshold voltage, and drain current of the MOSFET in this study. Al<inf>2</inf>O<inf>3</inf> gate material gives the highest terminal current and faster turn-on voltage (0.7 V) of the MOSFET compared to the other two. Al<inf>2</inf>O<inf>3</inf> delivers the best performance; and hence, it could be a promising material for the gate layer. In addition, electron and hole concentrations of those gate oxides and electric potential have been compared. In this paper, COMSOL Multiphysics® software has been used to simulate the obtained results.\",\"PeriodicalId\":389360,\"journal\":{\"name\":\"2023 3rd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 3rd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICREST57604.2023.10070064\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 3rd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICREST57604.2023.10070064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of Different Gate Materials on Performance of Si Based MOSFET
In this paper, Silicon-based MOSFET has been investigated with different gate oxides for knowing which oxide shows the best result. Silicon-di oxide (SiO2), gallium oxide (Ga2O3), and aluminum oxide (Al2O3) have been used as gate materials for observing the sensitivity, threshold voltage, and drain current of the MOSFET in this study. Al2O3 gate material gives the highest terminal current and faster turn-on voltage (0.7 V) of the MOSFET compared to the other two. Al2O3 delivers the best performance; and hence, it could be a promising material for the gate layer. In addition, electron and hole concentrations of those gate oxides and electric potential have been compared. In this paper, COMSOL Multiphysics® software has been used to simulate the obtained results.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
