0.45V 687pW低噪声放大器前端，1.73 NEF用于能量清除物联网传感器

2016 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2016-03-14 DOI:10.1109/IEEE-IWS.2016.7585429

Shuo Li, Xiong Zhou, Sanfeng Zhang, Hailiang Yao, Qiang Li, Vahid Behravan, A. Natarajan, Zhiliang Hong, P. Chiang

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引用次数: 0

摘要

本文提出了一种用于超低功耗无线物联网传感器节点的亚纳瓦前端放大器。该芯片由仪表放大器、直流伺服回路、时钟发生器和偏置电路组成。它是完全集成的，因此不依赖于任何芯片外的参考。测量结果表明，该放大器系统的增益为39dB，带宽为0.1 ~ 130hz，足以满足许多低频传感器接口的应用。在0.45V电源电压下，测量功率为687pW，与先前发布的afe相比，这是唯一的低于nw的低噪声放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 0.45V 687pW low noise amplifier front-end with 1.73 NEF for energy-scavenging IoT sensors

This paper presents a sub-nanowatt front-end amplifier for ultra-low-power wireless IoT sensor nodes. This chip consists of an instrumentation amplifier, a DC servo loop, a clock generator and a bias circuit. It is fully integrated, and therefore does not rely on any off-chip references. Fabricated in 65nm CMOS process, measurement results show that the amplifier system achieves 39dB gain and 0.1-130Hz bandwidth, sufficient for many low-frequency sensor interface applications. The measured power is 687pW for a 0.45V supply voltage, which when compared with previously published AFEs, is the only sub-nW low-noise amplifier.

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2016 IEEE MTT-S International Wireless Symposium (IWS)

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