先进半导体激光器用基于GaInAsP/InP的量子线盒及相关材料

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491920

S. Arai

{"title":"先进半导体激光器用基于GaInAsP/InP的量子线盒及相关材料","authors":"S. Arai","doi":"10.1109/ICIPRM.1996.491920","DOIUrl":null,"url":null,"abstract":"A great success in semiconductor lasers has been brought by developments in epitaxial growth technology to realize high quality quantum-well structures of precisely controlled thickness and compositions. Further high-performance characteristics, such as low-threshold current and high-efficiency operations, can be attained by adopting quantum-wire and quantum-box structures. To meet this objective, very low-damage fabrication technology of ultra-fine structures with high accuracy is required, and various fabrication methods have been investigated. Latest results on the fabrication processes and lasing properties of quantum-wire and quantum-box lasers are reviewed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum-wires and -boxes based on GaInAsP/InP and related materials for advanced semiconductor lasers\",\"authors\":\"S. Arai\",\"doi\":\"10.1109/ICIPRM.1996.491920\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A great success in semiconductor lasers has been brought by developments in epitaxial growth technology to realize high quality quantum-well structures of precisely controlled thickness and compositions. Further high-performance characteristics, such as low-threshold current and high-efficiency operations, can be attained by adopting quantum-wire and quantum-box structures. To meet this objective, very low-damage fabrication technology of ultra-fine structures with high accuracy is required, and various fabrication methods have been investigated. Latest results on the fabrication processes and lasing properties of quantum-wire and quantum-box lasers are reviewed.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.491920\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.491920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

外延生长技术的发展为实现精确控制厚度和成分的高质量量子阱结构带来了巨大的成功。通过采用量子线和量子盒结构，可以获得低阈值电流和高效率运算等高性能特性。为实现这一目标，需要高精度、极低损伤的超细结构制造技术，各种制造方法已被研究。综述了量子线和量子盒激光器的制备工艺和激光特性的最新研究成果。

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Quantum-wires and -boxes based on GaInAsP/InP and related materials for advanced semiconductor lasers

A great success in semiconductor lasers has been brought by developments in epitaxial growth technology to realize high quality quantum-well structures of precisely controlled thickness and compositions. Further high-performance characteristics, such as low-threshold current and high-efficiency operations, can be attained by adopting quantum-wire and quantum-box structures. To meet this objective, very low-damage fabrication technology of ultra-fine structures with high accuracy is required, and various fabrication methods have been investigated. Latest results on the fabrication processes and lasing properties of quantum-wire and quantum-box lasers are reviewed.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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