倒装晶片粘合薄硅片箔组件在弯曲过程中的电学行为

2015 IEEE 21st International Symposium for Design and Technology in Electronic Packaging (SIITME) Pub Date : 2015-12-03 DOI:10.1109/SIITME.2015.7342355

N. Palavesam, D. Bonfert, W. Hell, C. Landesberger, H. Gieser, C. Kutter, K. Bock

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引用次数: 4

摘要

我们介绍了我们的结果，对倒装芯片键合薄硅片箔组件在弯曲过程中的电气性能的分析。利用定制的折弯机对试件进行折弯，并在试验过程中测量雏菊链结构的电阻。在大约2000次弯曲循环后，电阻测量证实了测试样品的失效。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical behaviour of Flip-Chip bonded thin silicon chip-on-foil assembly during bending

We present our results on the analysis of electrical performance of Flip-Chip bonded thin Silicon chip-on-foil assemblies during bending. A custom made bending machine was utilized to bend the test samples and the electrical resistance of the Daisy Chain structures were measured during the tests. Resistance measurements confirmed the failure of the test samples after about 2000 bending cycles.

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来源期刊

2015 IEEE 21st International Symposium for Design and Technology in Electronic Packaging (SIITME)

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