一种从近场扫描免疫推断辐射磁化率的严密方法

A. Boyer
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引用次数: 3

摘要

近场注入或近场扫描免疫是分析电路板和电路磁化率的一种很有前途的方法。由此产生的免疫图提供了对给定近场源电磁干扰敏感区域的精确定位。然而,外推对另一个辐射源的免疫力,无论是在近场还是远场,都不是微不足道的。本文旨在提出一种严格的近场扫描抗扰度结果后处理方法,以推断其他干扰条件(如远场照明)下的辐射抗扰度。通过仿真案例对该方法进行了描述和验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Rigorous Method to extrapolate Radiated Susceptibility from Near-Field Scan Immunity
Near-field injection or near-field scan immunity is a promising method for the analysis of the susceptibility of electronic boards and circuits. The resulting immunity map provides a precise localization of the sensitive area to electromagnetic disturbances to a given near-field source. However, the extrapolation of the immunity to another radiating source, either in near or far-field, is not trivial. This paper aims at proposing a rigorous post-processing method of near-field scan immunity results to extrapolate radiated immunity in other disturbance conditions, e.g. far-field illumination. The method is described and validated through simulation case studies.
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