{"title":"零沟道偏置在纳米探测中器件导通和塞贝克效应的测定","authors":"Gregory M. Johnson, H. Stegmann, A. Rummel","doi":"10.31399/asm.cp.istfa2022p0262","DOIUrl":null,"url":null,"abstract":"\n In prior work, it was demonstrated that information about device turn-on can be obtained in a nanoprobing setup which involves no applied bias across the channel. This was performed on nFET logic devices in 7 nm technology and attributed to the Seebeck effect, or heating from the SEM beam. In this work, the experiments are continued to both nFET and pFET devices and on both 22 nm and 5 nm devices. Further discussion about the opportunities and evidence for Seebeck effect in nanoprobing are discussed.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Zero Channel Bias Determination of Device Turn-On and the Seebeck Effect in Nanoprobing\",\"authors\":\"Gregory M. Johnson, H. Stegmann, A. Rummel\",\"doi\":\"10.31399/asm.cp.istfa2022p0262\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In prior work, it was demonstrated that information about device turn-on can be obtained in a nanoprobing setup which involves no applied bias across the channel. This was performed on nFET logic devices in 7 nm technology and attributed to the Seebeck effect, or heating from the SEM beam. In this work, the experiments are continued to both nFET and pFET devices and on both 22 nm and 5 nm devices. Further discussion about the opportunities and evidence for Seebeck effect in nanoprobing are discussed.\",\"PeriodicalId\":417175,\"journal\":{\"name\":\"International Symposium for Testing and Failure Analysis\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Symposium for Testing and Failure Analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.cp.istfa2022p0262\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium for Testing and Failure Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2022p0262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Zero Channel Bias Determination of Device Turn-On and the Seebeck Effect in Nanoprobing
In prior work, it was demonstrated that information about device turn-on can be obtained in a nanoprobing setup which involves no applied bias across the channel. This was performed on nFET logic devices in 7 nm technology and attributed to the Seebeck effect, or heating from the SEM beam. In this work, the experiments are continued to both nFET and pFET devices and on both 22 nm and 5 nm devices. Further discussion about the opportunities and evidence for Seebeck effect in nanoprobing are discussed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
