与标准的小轮廓封装相比,使用凹凸芯片载波封装的rfic的电气性能有所提高

T. Horng, S. Wu, J. Li, C. Chiu, C. Hung
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引用次数: 8

摘要

基于s参数测量,建立了Bump Chip Carrier (BCC)封装的电学模型。与标准的薄收缩小轮廓封装(TSSOP)相比,bcc在等效电路中表现出更小的寄生效应。在仿真中,根据频率计算了通过片上50欧姆线连接的任意一对封装引线的插入损耗和回波损耗。在较宽的频率范围内,bcc比TSSOPs具有更好的损耗特性。通过对封装的每个等效电路元件设置一个在一定范围内高斯分布的随机变量,采用蒙特卡罗分析方法研究了封装对砷化镓异质结双极晶体管(HBT)的影响。同样,bcc对HBT单位增益带宽的衰减比tssop要小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical performance improvements on RFICs using bump chip carrier packages as compared to standard small outline packages
The electrical models of Bump Chip Carrier (BCC) packages have been established based on the S-parameter measurement. When compared to the standard Thin Shrink Small Outline Packages (TSSOP), BCCs exhibit much smaller parasitics in the equivalent circuits. In the simulation, the insertion and return losses for an arbitrary pair of package leads connected through an on-die 50-ohm line are calculated against frequency. BCCs also show better loss characteristics than TSSOPs over a wide frequency range. By setting a random variable with Gaussian distribution varied within a certain range for each equivalent circuit element of the packages, the Monte Carlo analysis has been performed to study the package effects on a GaAs Heterojunction Bipolar Transistor (HBT). Again, BCCs cause less decrement of HBT's unity-gain bandwidth than TSSOPs.
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