{"title":"离子失效机制的温度依赖缺陷水平","authors":"R. S. Hemmert","doi":"10.1109/IRPS.1981.362991","DOIUrl":null,"url":null,"abstract":"On N-channel MOSFET devices, phosphosilicate glass maintains threshold stability by gettering ionic (sodium) contaminants, typically to 250°C. However, defects can affect the phosphosilicate glass and substantially reduce its gettering ability. The defect level then becomes temperature dependent, which if not taken into account, results in erroneous reliability projections.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Temperature Dependent Defect Level for an Ionic Failure Mechanism\",\"authors\":\"R. S. Hemmert\",\"doi\":\"10.1109/IRPS.1981.362991\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"On N-channel MOSFET devices, phosphosilicate glass maintains threshold stability by gettering ionic (sodium) contaminants, typically to 250°C. However, defects can affect the phosphosilicate glass and substantially reduce its gettering ability. The defect level then becomes temperature dependent, which if not taken into account, results in erroneous reliability projections.\",\"PeriodicalId\":376954,\"journal\":{\"name\":\"19th International Reliability Physics Symposium\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1981.362991\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.362991","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature Dependent Defect Level for an Ionic Failure Mechanism
On N-channel MOSFET devices, phosphosilicate glass maintains threshold stability by gettering ionic (sodium) contaminants, typically to 250°C. However, defects can affect the phosphosilicate glass and substantially reduce its gettering ability. The defect level then becomes temperature dependent, which if not taken into account, results in erroneous reliability projections.
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